Ease of Paralleling. Maximum Ratings. TOAB. IRF IRF IRF NJ Semi-Conductors encourages customers to verify that datasheets are current. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power. Part, IRF Category, Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel. Description, A, V, Ohm, N-channel.
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IRF Datasheet(PDF) – Inchange Semiconductor Company Limited
Datashfet Temperature td off tf tr Fig. Please note that some Vishay documentation may still make reference to the IEC dstasheet. Product names and markings noted herein may be trademarks of their respective owners.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Products may be manufactured at one of several qualified locations. Repetitive rating; pulse width limited by maximum junction temperature see fig.
B, Mar 7 8 9 10 Fig. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.
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IRF Datasheet(PDF) – Vishay Siliconix
The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
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Drain Current Current regulator Same type as D.
Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.